A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption |
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| Authors: | L J Qin X L Meng Ch L Du L Zhu B Ch Xu H Zh Xu F Y Jiang Z Sh Shao |
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| Institution: | a College of Environmental Engineering and Materials, Yantai University, Shandong Province 264005, China;b State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | We have demonstrated a passively Q-switched operation of Nd:GdVO4 laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ. |
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| Keywords: | Diode-pumped GaAs Passively Q-switched Nd:GdVO4 |
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