DISTORTION PROPERTIES OF GaN SWITCHES AT HIGH-TEMPERATURES |
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Authors: | Mohamed Kameche |
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Institution: | (1) National Centre of Space Techniques, BP 13, 1 Avenue de la Palestine, 31200 Arzew, Algeria |
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Abstract: | The origins of HEMT distortion in passive control applications as SPST switch are presented in this paper. Also, this paper
describes the change of the AlGaN/GaN HEMT switch distortion properties (second-and third distortion intercept points) over
a wide range of temperature. The results indicate that the change in second-and third-order distortion intercept points is
smaller (about 2dBm) over a wide range of temperature from −50 to +300°C. A comparison of the GaN-based HEMT switch with InP-and
GaAs-HEMT switches shows that the GaN technology generates lower distortion than its InP and GaAs technologies counterpart. |
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Keywords: | Switch SPST HEMT Temperature GaN InP |
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