The Frenkel effect in semiconductor diodes

A possible explanation is postulated of the experimentally observed (under certain conditions) dependence of the reverse current of geranium and silicon diodes on the applied voltage. The explanation is based on a supposition that the probability of the generation of electrons and holes by recombination centers in the zone of the volume charge of a p-n junction (to which an inverse voltage is applied) is increased due to the thermal ionization being facilitated by the electric field.