Physical model of drain conductance, gd, degradation ofNMOSFET's due to interface state generation by hot carrierinjection

Degradation of analog device parameters such as drain conductance, g_d, due to hot carrier injection has been modeled for NMOSFET's. In this modeling, mobility reduction caused by interface state generation by hot carrier injection and the gradual channel approximation were employed. It has been found that g_d degradation can be calculated from linear region transconductance, g_m, degradation which is usually monitored for hot carrier degradation of MOSFET's. The values of g_d degradation calculated from g_m degradation fit well to the measured values of g_d degradation The dependence of the g_d degradation lifetime on L_eff has been also studied, this model also provides an explanation of the dependence on L_eff. The model is then useful for lifetime predictions of analog circuits in which g_d degradation is usually more important than g_m degradation