Excitation of shear waves due to the interband absorption of laser radiation in a piezoelectric semiconductor-dielectric layered structure

Optical piezoelectric generation of shear bulk acoustic waves by volume-distributed electric fields in the vicinity of a hard planar interface between a piezoelectric semiconductor and a dielectric is described theoretically. Nonstationary and nonuniform electric fields are formed as a result of the spatial separation of electrons and holes photoexcited in the piezoelectric semiconductor due to the interband absorption of laser radiation. Frequency regions where the efficiency of the optical piezoelectric excitation of shear waves increases when the surface of the piezoelectric semiconductor is loaded by another piezoelectric with a high acoustic impedance are found. Numerical estimates of the applicability of the immobile hole model are presented.