| 强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响 |
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| 引用本文： | 杨志安, 靳涛, 杨祖慎, 等. 强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响[J]. 强激光与粒子束, 2002, 14(02). |
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| 作者姓名： | 杨志安 靳涛 杨祖慎 姚育娟 罗尹虹 戴慧莹 |
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| 作者单位： | 1.济南大学 理学院, 山东 济南 250022;;2.中国科学院 新疆物理研究所, 新疆 乌鲁木齐 83001 1 ;;3.新疆大学 物理系, 新疆 乌鲁木齐 830046;;4.西北核技术所, 陕西 西安 71 0024;;5.空军工程大学 电信通信学院, 陕西 西安 71 0077 |
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| 摘 要： | 利用强脉冲X射线对Si-SiO2界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO2界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO2界面产生损伤的机理，并对实验结果进行了解释。
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| 关 键 词： | X射线 Si-SiO2界面 辐射损伤 |
Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray |
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| yang zhi-an, jin tao, yang zu-shen, et al. Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray[J]. High Power Laser and Particle Beams, 2002, 14. |
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| Authors: | yang zhi-an jin tao yang zu-shen yao yu-juan luo yin-hong dai hui-ying |
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| Affiliation: | 1. School of Science,Jinan University,Jinan 250022,China;;2. Xinjiang Institute of Physics,the Chinese Academy of Sciences,Urumqi 830011 ,China;;3. Department of Physics,Xinjiang University,Urumqi 830046,China;;4. Northwest Institute of Nuclear Technology,Xi'an 710024,China;;5. Telecommunication Engineering Institute of Air Force Engineering University,Xi'an 710077,China |
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| Abstract: | Intense pulse X-ray is used to irradiate Si-SiO2 interface. C-V curves and I-V curves are tested be fore and after X-ray irradiation. Experiment results show that C-V curves have the following changes under intense pulse X-ray irradiation: (1) Flatband Volt age of high frequency C-V has a little positive drift, sodoes the gate volt age in depletion region, which is different from a negative drift under low-power pulse X-ray irradiation; (2) Oxide capacitance of low and high frequency C-V lift after intense pulse X-ray irradiation; (3) Minimum capacitance of high frequency C-V lifts after intense pulse X-ray irradiation. Experiment results also show that slopes of I-V subthreshold curves have gradually aber rant under six times intense pulse X-ray irradiation. One reason is that intense pul |
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| Keywords: | x-ray si-sio2 interface radiation impairment |
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