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Mobility of positrons in silicon |
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| Authors: | Allen P Mills Loren Pfeiffer |
| Institution: | Bell Laboratories, Murray Hill, New Jersey 07974, USA |
| Abstract: | The drift velocity v+ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v+ yields the positron mobility μ+: at 80 K μ+=460±20 cm2V-1 sec-1 and at 184 K μ+=173±15 cm2V-1 sec-1. |
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