Dechanneling by twins |
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Authors: | G. Foti L. Csepregi E. Kennedy P. Pronko J.W. Mayer |
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Affiliation: | California Institute of Technology, Pasadena, CA 91125, USA |
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Abstract: | Twinned regions in Si exhibit enhanced dechanneling and narrower critical angles than the host crystal. MeV 4He backscattering spectra along <111> in twinned Si can be interpreted on the basis of additive contributions from host and twinned lattices. |
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