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Dechanneling by twins
Authors:G. Foti  L. Csepregi  E. Kennedy  P. Pronko  J.W. Mayer
Affiliation:California Institute of Technology, Pasadena, CA 91125, USA
Abstract:Twinned regions in Si exhibit enhanced dechanneling and narrower critical angles than the host crystal. MeV 4He backscattering spectra along <111> in twinned Si can be interpreted on the basis of additive contributions from host and twinned lattices.
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