Optoelectronic resonant cavity technology based on inversion channel devices

In this paper the implementation of the inversion channel technology in a vertical cavity configuration is demonstrated. It is shown that by using a universal processing sequence a bistable surface emitting laser, a resonant cavity detector and a hetero-structure field effect transistor (H FET) can all be realized from a single epitaxial growth. The surface emitting double heterostructure opto-electronic switch (DOES) laser exhibits a pulsed threshold current of 10 mA for a 14 m diameter device. The resonant cavity detector achieved a peak responsivity of 0.6 AW^–1 in the H FET mode and 19 AW^–1 when operated in phototransistor mode. The H FET had a peak transconductance of 40 mS mm^–1 and a peak source to drain current density of 120 mA mm^–1.