| SiCN薄膜在Si衬底上的沉积 |
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| 引用本文： | 程文娟,张阳,江锦春,朱鹤孙.SiCN薄膜在Si衬底上的沉积[J].人工晶体学报,2004,33(6):913-917. |
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| 作者姓名： | 程文娟 张阳 江锦春 朱鹤孙 |
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| 作者单位： | 清华大学化学系,功能晶体与薄膜研究所,北京,100084;清华大学化学系,功能晶体与薄膜研究所,北京,100084;清华大学光子与电子技术研究中心,北京,100084 |
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| 摘 要： | 本文采用微波等离子体化学气相沉积(MPCVD)系统,在单晶Si衬底上制备出了SiCN薄膜.所采用的源气体为高纯CH4和N2,而Si源来自于Si衬底、SiH4和Si棒.用场发射扫描电镜(SEM)、X射线光电子能谱(XPS)和X射线衍射谱(XRD)对样品进行了表征与分析.结果表明,外加Si源、高的衬底温度、高流量N2有助于提高样品的成膜质量.所得到SiCN样品是新型的六方结构三元化合物.
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| 关 键 词： | SiCN薄膜 微波等离子体化学气相沉积 扫描电镜 X射线光电子能谱 X射线衍射 |
| 文章编号： | 1000-985X(2004)06-0913-05 |
Deposition of Silicon Carbon Nitride Film on Si (100) Substrates |
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| CHENG Wen-juan,ZHANG Yang.Deposition of Silicon Carbon Nitride Film on Si (100) Substrates[J].Journal of Synthetic Crystals,2004,33(6):913-917. |
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| Authors: | CHENG Wen-juan ZHANG Yang |
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| Institution: | CHENG Wen-juan~1,ZHANG Yang~ |
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| Abstract: | Silicon carbon nitride (SiCN) film was synthesized on Si wafer by microwave plasma chemical vapor deposition (MPCVD) with CH_4, N_2 and different Si sources. The samples were characterized by field emission scanning electron microscopy (SEM), X-ray photo-emission spectroscopy (XPS) and X-ray diffraction spectroscopy. It is shown that additional Si source, high substrate temperature and high flow rate of N_2 contribute to obtain a SiCN film with high quality. The film exhibits a new hexagonal SiCN phase and multibonding structure. |
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| Keywords: | SiCN film MPCVD SEM XPS XRD |
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