Structural and Electrochromic Properties of Co-Oxide and Co/Al/Si-Oxide Films Prepared by the Sol-Gel Dip Coating Technique |
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Authors: | F Švegl B Orel M Hutchins |
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Institution: | (1) National Institute of Chemistry, Hajdrihova 19, 61115 Ljubljana, Slovenia;(2) Oxford Brookes University, Oxford, UK |
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Abstract: | The sol-gel dip-coating technique was used for depositing cubic spinel Co3O4 and amorphous Co/Al/Si-oxide thin films. Both types of films exhibit similar electrochrochemical properties which are accompanied by the hydration of the structure. The electrochromic properties of Co/Al/Si-oxide surpass those already known for Co-oxide based electrochromic materials. The change in transmittance for spinel Co3O4 is 25%, while for Co/Al/Si-oxide films exceeds 50%. The electrochromic efficiency () for Co3O4 and Co/Al/Si-oxide films was 22 cm2 C-1, which is comparable to other electrochromic oxides. Good electrochromic properties of the Co/Al/Si-oxide films make them promising materials for active counter electrode in electrochromic devices. |
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Keywords: | sol-gel deposited films electrochromic materials cobalt oxide |
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