Contact barriers in a single ZnO nanowire device |
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Authors: | Kanghyun Kim Haeyong Kang Hyeyoung Kim Jong Soo Lee Sangtae Kim Woun Kang and Gyu-Tae Kim |
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Institution: | (1) School of Electrical engineering, Korea University, Seoul, 136-701, South Korea;(2) Department of Chemical Engineering and Materials Science, UC Davis, Davis, CA 95616, USA;(3) Department of Physics, Ewha University, Seoul, 120-750, South Korea |
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Abstract: | The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious
plot of the two-probe resistance, the thermionic emission conduction, and the Fowler–Nordheim tunneling model. The net voltages
applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents.
The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance.
The Fowler–Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime
as lowering the temperatures below T<100 K. |
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Keywords: | PACS" target="_blank">PACS 71 55 Gs 72 80 Ey 73 40 Cg 73 40 Sx 73 63 -b |
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