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Contact barriers in a single ZnO nanowire device
Authors:Kanghyun Kim   Haeyong Kang   Hyeyoung Kim   Jong Soo Lee   Sangtae Kim   Woun Kang  Gyu-Tae Kim
Affiliation:(1) School of Electrical engineering, Korea University, Seoul, 136-701, South Korea;(2) Department of Chemical Engineering and Materials Science, UC Davis, Davis, CA 95616, USA;(3) Department of Physics, Ewha University, Seoul, 120-750, South Korea
Abstract:The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler–Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler–Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.
Keywords:  KeywordHeading"  >PACS 71.55.Gs  72.80.Ey  73.40.Cg  73.40.Sx  73.63.-b
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