The characteristics of high current amorphous silicon diodes |
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| Authors: | R A Gibson P G Le Comber W E Spear |
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| Institution: | (1) Carnegie Laboratory of Physics, University of Dundee, DD1 4HN Dundee, Scotland |
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| Abstract: | Amorphous siliconp−n junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile
on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn
+−ν−p
+ structures. The diode quality factor has also been investigated, both in the dark and under illumination. |
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| Keywords: | 61 40 84 60 |
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