An ab initio molecular orbital study of the trimethylgallium-arsine adduct: (CH3)3Ga:AsH3

The structure, harmonic frequencies, and binding energy of the trimethylgallium-arsine adduct, (CH₃)₃Ga: AsH₃, have been computed using ab initio molecular orbital methods, and, where possible, compared with experimental results. The structures and frequencies of the precursors trimethylgallium and arsine are perturbed to only a small extent upon adduct formation. The binding energy of (CH₃)₃Ga: AsH₃ is found to be 5.2 kcal/mol lower than that for H₃Ga:AsH₃ at the MP2/HUZSP^*//RHF/HUZSP^* level of computation.