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采用热丝化学气相沉积法制备SiCN薄膜的研究
引用本文:赵武,屈亚东,张志勇,贠江妮,樊玎玎.采用热丝化学气相沉积法制备SiCN薄膜的研究[J].中南大学学报(自然科学版),2010,41(1).
作者姓名:赵武  屈亚东  张志勇  贠江妮  樊玎玎
作者单位:西北大学,信息科学与技术学院,陕西,西安,710127
基金项目:陕西省自然科学基金资助项目,陕西省教育厅专项科研计划项目,西北大学研究生创新基金资助项目 
摘    要:采用热丝化学气相沉积(HFCVD)系统,在单晶Si衬底上制备SiCN薄膜。所采用的源气体为高纯的SiH4,CH4和N2。用原子力显微镜(AFM)、X线衍射谱(XRD)和X线光电子能谱(XPS)对样品进行表征与分析。研究结果表明:SiCN薄膜表面由许多粒径不均匀、聚集紧密的SiCN颗粒组成;薄膜虽然已经晶化,但晶化并不充分,存在着微晶和非晶成分,通过Jade软件拟合计算出薄膜的结晶度为48.72%;SiCN薄膜不是SiC和Si3N4的简单混合,薄膜中Si,C和N这3种元素之间存在多种结合态,主要的化学结合状态为Si—N,Si—N—C,C—N,N=C和N—Si—C键,但是,没有观察到Si—C键,说明所制备的薄膜形成了复杂的网络结构。

关 键 词:SiCN薄膜  热丝化学气相沉积法(HFCVD)  原子力显微镜(AFM)  X线衍射谱(XRD)  X线光电子能谱(XPS)

Silicon carbon nitride thin film produced by hot-filament chemical vapor deposition
ZHAO Wu,QU Ya-dong,ZHANG Zhi-yong,YUN Jiang-ni,FAN Ding-ding.Silicon carbon nitride thin film produced by hot-filament chemical vapor deposition[J].Journal of Central South University:Science and Technology,2010,41(1).
Authors:ZHAO Wu  QU Ya-dong  ZHANG Zhi-yong  YUN Jiang-ni  FAN Ding-ding
Abstract:The silicon carbon nitride (SiCN) thin film was synthesized on Si substrate by hot-filament chemical vapor deposition (HFCVD) with the source gas of SiH4, CH4 and N2.The sample was characterized by atomic force microscope (AFM), X-ray diffraction spectroscopy (XRD) and X-ray photo-emission spectroscopy (XPS). The results show that the surface of the SiCN thin film is composed of a lot of grains which have different sizes and accumulate close. The thin film is crystallized, but crystallization is not complet...
Keywords:SiCN thin film  hot-filament chemical vapor deposition  atomic force microscope  X-ray diffraction spectroscopy  X-ray photo-emission spectroscopy  
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