太赫兹宽带非对称传输器件的研究

提出一款双层双L形太赫兹非对称传输器件,其结构单元由典型的金属-介质-金属结构组成,顶层为轴对称的双L形金属层,底层为中心对称的双L形金属层。在1.174~1.420THz范围内,当x极化波正向垂直入射时,该器件的非对称传输参数大于0.6,其中在1.207~1.377THz范围内非对称传输参数大于0.8,在1.334THz时非对称传输参数达到峰值0.859。最后,讨论了材料的选择和入射角度对器件非对称传输性能的影响。该非对称传输器件具有频带宽、非对称传输明显等特点,可用于太赫兹二极管、太赫兹开关等功能器件。

Study on Terahertz Broadband Asymmetric Transmission Devices

A bilayered double-L asymmetric transmission device in terahertz band was proposed. The unit cell of the proposed device has a typical metal-dielectric-metal structure, the top and bottom layers of which are axisymmetric double-L patch and center-symmetric double-L patch, respectively. The asymmetric transmission of x-polarized normal incident wave propagating forward is over 0.6 in 1.174~1.420THz and over 0.8 in 1.207~1.377THz, with a maximum of 0.859 at 1.334THz. The influence of materials and incident angle on asymmetric transmission of the device is also discussed. The devices with advantages such as wide broadband and high asymmetric transmission effect can be used in various metamaterial-based functional devices like THz diodes and THz switches.