Substituent effects in radical cations of linear oligosilanes |
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| Authors: | A N Egorochkin M G Voronkov S E Skobeleva T G Mushtina O V Zderenova |
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| Institution: | (1) G. A. Razuvaev Institute of Organometallic Chemistry, Russian Academy of Sciences, 49 ul. Tropinina, 603600 Nizhnii Novgorod, Russian Federation;(2) Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, 1 ul. Favorskogo, 664033 Irkutsk, Russian Federation |
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| Abstract: | The dependence was analyzed of the first ionization potentialI(Si−Si) corresponding to detachment of an electron from the σ(Si−Si) highest occupied molecular orbital on the parameters
of organic (X=Me, Et, Bu
t
, Ph, CH=CH2), inorganic (X=F, Cl, Br), and organosilicon (X=SiR3; R is organic radical) substituents in di-, tri-, and tetrasilanes X3SiSiX3. It was found by correlation analysis that out of the three possible effects of substituents X (the inductive, polarizability,
and resonance effects), only the first two of them affect theI(Si−Si) values. This means that no conjugation between the substituent X and the radical cation center occurs in X3Xi±SiX3.
Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 253–257, February, 2000. |
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| Keywords: | linear oligosilanes ionization potential radical cations substituent effects |
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