A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 |
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Authors: | Y Matsui M Okuyama M Noda Y Hamakawa |
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Institution: | (1) Faculty of Engineering Science, Osaka University, Tyonaka, 560 Osaka, Japan |
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Abstract: | Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm–2eV–1) with the maximal dielectric constant of PbTiO3 thin films. |
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Keywords: | 73 20 73 40 79 20 |
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