One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix |
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Authors: | Qing-Hu Zhong Yu-Qin Zhang Hai-Chao Sun |
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Affiliation: | School of Physics and Electronic Engineering, Guangzhou University, Guangzhou Higher Education Mega Center, Guangzhou 510006, PR China |
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Abstract: | We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments. |
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Keywords: | 78. 78.30.-j 78.30.Fs 78.67.Hc |
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