Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing |
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Authors: | Z. Zaâ boub,L. Sfaxi,B. Salem,V. Aimez |
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Affiliation: | a Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences, Avenue de l'environnement, 5019 Monastir, Tunisia b Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), Université de Sherbrooke (Québec), Canada |
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Abstract: | This work reports on InAs/GaAs quantum dots (QDs) intermixing, induced by phosphorous ion implantation and subsequent rapid thermal annealing. The implantation process was carried out at room temperature at various doses (5×1010-1014 ions/cm2), where the ions were accelerated at 50 keV. To promote the atomic intermixing, implanted samples are subjected to rapid thermal annealing at 675 °C for 30 s. Low temperature photoluminescence (PL) measurements are carried out to investigate the influence of the interdiffusion process on the optical and electronic properties of the QDs. PL emission energy; linewidth and integrated intensity are found to exhibit a drastic dependence on the ion implantation doses. The band gap tuning limit has been achieved for an implantation dose of 5×1013 ions/cm2. However, our measurement reveals that the accumulated defects for implantation doses higher than 1012 ions/cm2 drive the system towards the degradation of the QDs structure's quality. |
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Keywords: | InAs/GaAs Quantum dots Intermixing Photoluminescence Phosphorous-implantation |
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