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Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect |
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| Authors: | Chun-Nan Chen Wei-Long Su Ikai Lo Meng-En Lee |
| Affiliation: | a Department of Physics, Tamkang University, 151 Ying-chuan road, Tamsui, Taipei County, Taiwan 251, Taiwan, ROC b Department of Electronic Engineering, Lee-Ming Institute of Technology, Taishan, Taipei County, Taiwan 24305, Taiwan, ROC c Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC d Department of Physics, National Kaohsiung Normal University, Yanchao Township, Kaohsiung Country, Taiwan, ROC |
| Abstract: | This study investigates the optical anisotropy spectrum in the R-plane (i.e., the  -oriented layer plane) of GaN/Al0.2Ga0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in  -oriented GaN/Al0.2Ga0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x′-polarization to y′-polarization as the well width increases. |
| Keywords: | 68.65.Fg 78.55.Cr 78.67.De |
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