Properties of p- and n-Type PbTe Microwires for Thermoelectric Devices |
| |
| Authors: | Rudra P Bhatta Mark Henderson Andreza Eufrasio Ian L Pegg Biprodas Dutta |
| |
| Institution: | 1. Vitreous State Laboratory, The Catholic University of America, 620 Michigan Ave N.E., Washington, DC, 20064, USA
2. ZT3 Technologies, Inc., 3717 East Thousand Oaks Boulevard Suite 185, Thousand Oaks, CA, 91362, USA
|
| |
| Abstract: | In thermopower measurements, microwires fabricated from as-purchased bulk PbTe exhibits p-type behavior between room temperature and ～600 K. At higher temperatures, it undergoes majority carrier inversion and exhibits n-type behavior. We report on the preparation and properties of potassium oxide and Zn-doped PbTe microwires, which exhibit stable p- and n-type behavior, respectively, between room temperature and 725 K. Thermoelectric figures of merit (ZT) are reported for device components prepared from bundles of such p- and n-type microwires in a glass matrix. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
