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Resistive Switching and Memory Effects in Composite Films Based on Graphene Oxide in a Matrix of Organometallic Perovskites |
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| Authors: | Arkhipov A. V. Nenashev G. V. Aleshin A. N. |
| Affiliation: | 1.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - The resistive switching effect is studied in composite films based on organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 with graphene oxide (GO) particles with... |
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