首页 | 本学科首页   官方微博 | 高级检索  
     


Random lasing from dye-doped chiral nematic liquid crystals in oriented and non-oriented cells
Authors:Long-Wu?Li  author-information"  >  author-information__contact u-icon-before"  >  mailto:llwnn@.com"   title="  llwnn@.com"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,Luo-Gen?Deng
Affiliation:1.School of Physics,Beijing Institute of Technology,Beijing,P.R. China;2.Anshun University,Anshun,P.R. China
Abstract:These are the experimental results describing random lasing in dye-doped chiral nematic liquid crystals. A novel random lasing emission is studied in this article based on the helical domains of dye-doped chiral nematic liquid crystals in oriented and non-oriented cells. Under frequency doubled 532 nm Nd:YAG (yttrium aluminum garnet) laser-pumped optical excitation, we carefully observed and analysed random lasing from dye-doped chiral nematic liquid crystals with wavelength ranges from 600 nm to 620 nm. In addition, the line-width of multi-mode peaks is less than 0.2 nm. The difference between the two random lasing behaviours in the oriented and non-oriented cells arises from the fact that random lasing appearing in the oriented cell results from stronger multiple scattering of light generated by the spiral domains of the liquid crystal molecules. Furthermore, chiral nematic liquid crystal micro-domains with different orientations can induce variation of the diffusion constant, thereby resulting in a decrease or increase in the lasing intensity of the random lasers, and an increase or decrease in their energy thresholds. In addition, a detailed comparison of the two experimental results is also presented in the article, showing the dependence of the lasing threshold and the number of lasing modes on the transport mean free path, the excited area, and the sample size. This process allows us to obtain a random laser by changing the structure of the sample, realising tunable random lasers at low cost.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号