Commensurate oscillations of the magnetoresistance of a two-dimensional electron gas in GaAs quantum wells with corrugated heteroboundaries |
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| Authors: | A. K. Bakarov A. A. Bykov N. D. Aksenova D. V. Sheglov A. V. Latyshev A. I. Toropov |
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| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
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| Abstract: | Oscillations of the magnetoresistance commensurate with the spatial modulation period of the growth surfaces were observed in selectively doped GaAs quantum wells with AlAs/GaAs superlattice barriers grown by molecular beam epitaxy. The experimental data obtained are explained by the lateral potential modulation of the two-dimensional electron gas in narrow GaAs quantum wells with corrugated heteroboundaries and agree with the two-dimensional distribution of the local capacitance in such structures. |
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