Effect of annealing on the photoelectric properties of single crystals of InSe

The effect of different heat-treatment regimes on recombination processes in n-In_1.03Se_0.97<0.5Zn> was studied by the method of square-wave modulation of light intensity, with subsequent analysis of the experimental data by the least squares method on a computer. The specimens were annealed at a temperature of 360–400°C in a vacuum [1] or Zn vapors [11] for different periods of time. They were then slowly cooled at a rate of 2 deg/min (A) or quenched (B). It was established the lifetime of the nonequilibrium carriers increases by nearly an order of magnitude in case IB, while the ratio of s- and r-centers remains nearly the same. In case IIA, _s decreases roughly by a factor of two, while in the best specimens it reaches 2.3·10^–5 sec. Annealing for 20 h in regime IA leads to a large increase (by about 25%) in the density of s-centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 61–64, November, 1990.