Oscillations at a difference frequency in the middle and far infrareds in GaP semiconductor waveguides |
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Authors: | V. Ya. Aleshkin A. A. Afonenko A. A. Dubinov |
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Affiliation: | (1) Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Belarussian State University, ul. Kurchatova 7, Minsk, 220050, Belarus |
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Abstract: | The feasibility of oscillation at a difference frequency in the middle and far infrareds is considered under the condition of phase matching between a nonlinear polarization wave and a difference mode produced by two fundamental modes with a wavelength near 1 μm excited in a GaP dielectric waveguide. With 10-W short-wave modes propagating in a 100-μm-wide planar waveguide, the power of the difference mode can be as high as 300 μW at 1–8 THz at room temperature. When the GaP waveguide leans upon a silicon substrate, the power of the difference mode may reach 5 mW at 10–14 THz at the same temperatures. |
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