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Investigation of charge loss characteristics of HfO2 annealed in N2 or 02 ambient |
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| Authors: | Chu Yuqiong Huo Zongliang Han Yulong Chen Guoxing Zhang Dong Li Xinkai and Liu Ming |
| Institution: | Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China |
| Abstract: | KFM Hf02 retention |
| Keywords: | KFM Hf02 retention |
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