Spontaneous spin polarization in doped semiconductor quantum wells |
| |
Authors: | Email author" target="_blank">L O?JuriEmail author P I?Tamborenea |
| |
Institution: | (1) Department of Physics “Juan José Giambiagi”, University of Buenos Aires, Ciudad Universitaria, Pab. I, C1428, EHA Buenos Aires, Argentina |
| |
Abstract: | We calculate the critical density of the zero-temperature,
first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum
wells.
We predict that this transition could be observed in narrow quantum wells
at electron densities somewhat lower than the ones that have been considered
experimentally thus far, and that there exists an upper limit for the well
width beyond which there would be no transition as long as only one subband
is populated.
Our calculations are done within a screened Hartree-Fock approximation with a
polarization-dependent effective mass, which is adjusted to match the critical
density predicted by Monte Carlo calculations for the strictly two-dimensional
electron gas. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|