Supersymmetry across nanoscale heterojunction |
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Authors: | B Bagchi A Ganguly |
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Institution: | a Department of Applied Mathematics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009, India b City College, University of Calcutta, 13 Surya Sen Street, Kolkata 700 012, India |
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Abstract: | We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-type potentials. |
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Keywords: | Supersymmetry Semiconductor Effective band-parameters Nanoscale heterojunction |
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