Electronic structures of N- and C-doped NiO from first-principles calculations |
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Authors: | Run Long Damian A. Mooney |
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Affiliation: | The SEC Strategic Research Cluster and the Centre for Synthesis and Chemical Biology, Conway Institute of Biomolecular and Biomedical Research, School of Chemical and Bioprocess Engineering, University College Dublin, Belfield, Dublin 4, Ireland |
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Abstract: | The large intrinsic band gap of NiO has hindered severely its potential application under visible-light irradiation. In this Letter, we have performed first-principles calculations on the electronic properties of N- and C-doped NiO to ascertain if its band gap may be narrowed theoretically. It was found that impurity bands driven by N 2p or C 2p states appear in the band gap of NiO and that some of these locate at the conduction band minimum, which leads to a significant band gap narrowing. Our results show that N-doped NiO may serve as a potential photocatalyst relative to C-doped NiO, due to the presence of some recombination centres in C-doped NiO. |
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Keywords: | Doped Electronic structure NiO |
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