| 基于砷化镓工艺的集成式功分器 |
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| 引用本文： | 杜泽保,杨浩,张海英,朱旻.基于砷化镓工艺的集成式功分器[J].半导体学报,2014,35(4):045003-4. |
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| 作者姓名： | 杜泽保 杨浩 张海英 朱旻 |
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| 摘 要： | A compact lumped integrated power divider with low insertion loss using 0.5 μm GaAs pHEMT technology is presented. The proposed power divider uses the π-type LC network for transmission line equivalence and a thin film resistor for isolation tuning simultaneously. The quality factor of the inductor is analyzed and synthesized for insertion-loss influence. The measured insertion loss is less than 0.5 dB when the operating frequency is within the range of 5.15-6.15 GHz. The return loss and isolation are better than 15 dB and 20 dB, respectively. The compact dimension of the power divider is as small as 0.9 × 0.85 mm^2. The measured results agree well with the simulated ones.
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| 关 键 词： | GaAs技术 功率分配器 集成 插入损耗 pHEMT LC网络 薄膜电阻 品质因子 |
| 收稿时间： | 2013/6/17 0:00:00 |
| 修稿时间： | 2013/11/24 0:00:00 |
An integrated power divider implemented in GaAs technology |
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| Du Zebao,Yang Hao,Zhang Haiying and Zhu Min.An integrated power divider implemented in GaAs technology[J].Chinese Journal of Semiconductors,2014,35(4):045003-4. |
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| Authors: | Du Zebao Yang Hao Zhang Haiying and Zhu Min |
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| Institution: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | power divider GaAs IPD |
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| Keywords: | power divider GaAs IPD |
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