| p-CuAlO2/(n-, p-)Si异质结的制备与电学性质 |
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| 引用本文： | 吴素贞,邓赞红,董伟伟,邵景珍,方晓东.p-CuAlO2/(n-, p-)Si异质结的制备与电学性质[J].半导体学报,2014,35(4):043001-5. |
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| 作者姓名： | 吴素贞 邓赞红 董伟伟 邵景珍 方晓东 |
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| 基金项目： | 基于n型ZnO纳米线阵列/p型铜铁矿结构薄膜的波长可调谐发 光二极管制备、特性和机理研究;国家自然科学基金 |
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| 摘 要： | 采用化学溶液法在n型和p型Si衬底上成功制备了单相CuAlO2薄膜。薄膜的电导率-温度曲线显示，薄膜在200K-300K温度范围内呈热激活导电模式，激活能约为0.3eV。电流-电压特性测试显示，p-CuAlO2/n-Si异质结具有明显的整流特性，开启电压约为1.6V，在±3V处的整流率约为35，而p-CuAlO2/p-Si同型异质结表现出类似肖特基结的电学性质，由于p-CuAlO2导电性远低于p-Si衬底，正向电流受空间电荷限制。
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| 关 键 词： | CuAlO2 异质结 伏安曲线 |
Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions |
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| Wu Suzhen,Deng Zanhong,Dong Weiwei,Shao Jingzhen and Fang Xiaodong.Fabrication and electrical properties of p-CuAlO2/(n-, p-)Si heterojunctions[J].Chinese Journal of Semiconductors,2014,35(4):043001-5. |
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| Authors: | Wu Suzhen Deng Zanhong Dong Weiwei Shao Jingzhen and Fang Xiaodong |
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| Institution: | Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;Key Laboratory of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China;Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;Key Laboratory of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China;Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;Key Laboratory of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China;Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;Key Laboratory of Novel Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | |
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| Keywords: | CuAlO2 heterojunction current-voltage characteristic |
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