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Discrimination of individual atoms on Ge/Si(1 1 1)-(7 × 7) intermixed surface
Authors:Insook Yi  Ryuji Nishi  Masayuki Abe  Seizo Morita
Institution:a Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871, Japan
b Handai Frontier Research Center, Graduate School of Engineering, Osaka University, Japan
Abstract:We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si-Ge (IV-IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si-Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.
Keywords:Si (silicon)  Ge (germanium)  Discrimination  Nanotechnology  Non-contact atomic force microscope (NC-AFM)  Intermixed surface  Room temperature  Chemical bonding force  Relaxation
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