Ordering of Si atoms on the ten-fold surface of the decagonal Al72Ni11Co17 quasicrystal |
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Authors: | L Leung J Ledieu P Unsworth AR Ross |
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Institution: | a Surface Science Research Centre and Department of Physics, The University of Liverpool, Liverpool L69 3BX, UK b Ames Laboratory, Iowa State University, Ames, IA 50011, USA |
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Abstract: | The deposition of Si at room temperature on the ten-fold quasicrystalline surface of d-Al-Ni-Co has been investigated by scanning tunnelling microscopy. At a coverage of 0.30 ML, Si pentagons in two orientations related by inversion symmetry are observed on the same substrate terrace. The side-length of the pentagons is 4.2 ± 0.2 Å. At this coverage, the Si adlayer displays quasiperiodic order. Depressions related to pentagonal features observed in STM images of the clean d-Al-Ni-Co substrate are proposed as plausible adsorption sites for the Si adatoms. As the Si coverage is increased, the well-defined structures observed are no longer distinguishable. At coverages above the monolayer, the Si overlayer follows a rough three-dimensional growth mode. |
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Keywords: | Silicon adlayer Scanning tunnelling microscopy Alloys |
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