Structure of ordered and disordered InxGa1−xP(0 0 1) surfaces prepared by metalorganic vapor phase epitaxy |
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Authors: | SF Cheng |
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Institution: | Department of Chemical Engineering, University of California, Los Angeles, CA 90095, United States |
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Abstract: | Ordered and disordered InGaP(0 0 1) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(0 0 1) appeared indium rich, and exhibited a reflectance difference spectrum like that of InP(0 0 1). These results support a model whereby the strain energy on the ordered InGaP surface is reduced by aligning the group III atoms in alternating 1 1 0] rows, with the indium and gallium bonding to the buckled-down and buckled-up phosphorus atoms, respectively. |
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Keywords: | Chemical vapor deposition Low energy electron diffraction Reflectance difference spectroscopy Order/disorder |
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