Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) |
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Authors: | Th. Seyller K.V. Emtsev F. Speck A. Tadich J.D. Riley O. Rader A.M. Shikin |
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Affiliation: | a Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany b Department of Physics, La Trobe University, Bundoora, Vic. 3083, Australia c BESSY, Albert-Einstein-Str. 15, 12489 Berlin, Germany d Institute of Physics, St. Petersburg State University, St. Petersburg 198904, Russia |
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Abstract: | Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate. |
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Keywords: | Silicon carbide Graphite Photoelectron spectroscopy Band structure Vicinal surface |
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