The study on Schottky contact between Au and clean CdZnTe |
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| Authors: | Gangqiang Zha Wanqi Jie Yadong Xu Faqiang Xu |
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| Affiliation: | a State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, People’s Republic of China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People’s Republic of China |
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| Abstract: | Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained. |
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| Keywords: | CdZnTe Schottky contact LEED SRPES XPS Metal-induced gap states |
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