Orientation and structure of triple step staircase on vicinal Si(1 1 1) surfaces |
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| Authors: | SA Teys |
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| Institution: | Institute of Semiconductor Physics, Siberian Division, Russian Academy of Science, Prospect Lavrentyeva 13, Novosibirsk 630090, Russia |
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| Abstract: | The vicinal Si(1 1 1) surface, inclined towards the  direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction. It has been established that the surface, consisting of regularly spaced triple steps and (1 1 1) terraces with a width equal to that of a single unit cell of the Si(1 1 1)-7 × 7 surface structure, has the (7 7 10) orientation. An atomic model of the triple step is proposed. |
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| Keywords: | Silicon Stepped single crystal surfaces Step formation and bunching Triple-layer-height steps Low energy electron diffraction (LEED) Scanning tunneling microscopy |
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