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Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface
Authors:J.R. Ahn  K.-S. An
Affiliation:a Department of Physics, SungKyunKwan University, Suwon 440-746, Republic of Korea
b Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
c Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Yuseong, P.O. Box 107, Daejon 305-600, Republic of Korea
Abstract:The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along View the MathML source is larger than along View the MathML source. The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along View the MathML source and View the MathML source are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.
Keywords:Silicon   Antimony   Self-assembly   One-dimensional structure   Surface reconstruction   Photoemission spectroscopy
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