Accurate and analytical strain mapping at the surface of Ge/Si(0 0 1) islands by an improved flat-island approximation |
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Authors: | V.A. Zinovyev G. Vastola F. Montalenti Leo Miglio |
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Affiliation: | L-NESS and Dipartimento di Scienza dei Materiali della Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy |
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Abstract: | We propose an extension of the well-known flat-island approximation in (1 + 1) dimensions which, while keeping simple analytical relations, allows one to better describe the strain field on the facets of steeper islands, and on the wetting layer between them. The results of atomistic molecular dynamics simulations using the Tersoff potential are used as a benchmark. The simple continuum approach is also shown to predict the correct trend of the strain gradients characterizing closely-spaced interacting islands, which has been recently observed to produce lateral motion of large Ge dots on Si(0 0 1). |
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Keywords: | Epitaxy Self-assembly Strain Germanium Silicon Molecular dynamics Green&rsquo s function methods |
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