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Reflection high-energy positron diffraction pattern from a Si(1 1 1)-(7 × 7) surface
Authors:K. Hayashi  A. Kawasuso
Affiliation:a Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
b Department of Mathematical and Physical Science, Japan Women’s University, 2-8-1 Mejiro-dai, Bunkyo-ku, Tokyo 112-8681, Japan
Abstract:We have investigated the feature of reflection high-energy positron diffraction (RHEPD) pattern from a Si(1 1 1)-(7 × 7) surface. The RHEPD pattern observed in the total reflection condition is quite different from the conventional reflection high-energy electron diffraction (RHEED) pattern. This fact is attributed to the different penetration depths of positrons and electrons. We show that the intensity distribution of RHEPD pattern is reproduced considering the dimer-adatom-stacking fault (DAS) model with optimized atomic positions and scattering potentials of adatoms and rest atoms.
Keywords:Reflection high-energy electron diffraction (RHEED)   Surface structure, morphology, roughness, and topography   Silicon   Low index single crystal surfaces
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