A comparative analysis of electron spectroscopy and first-principles studies on Cu(Pd) adsorption on MgO |
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Authors: | S. Krischok P. Stracke V. Kempter Yu.F. Zhukovskii |
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Affiliation: | a Institut für Physik und Physikalische Technologien, Technische Universität Clausthal, Leibnizstr. 4, D-38678 Clausthal-Zellerfeld, Germany b Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063, Latvia c Institut für Physik und Institut für Mikro - und Nanotechnologien,Technische Universität Ilmenau, P.O. Box 100565, D-98684 Ilmenau, Germany |
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Abstract: | Ultrathin MgO films were grown on a W(1 1 0) substrate while metastable impact electron (MIES) and photoelectron (UPS) spectra were measured in situ; apart from the valence band emission, no additional spectral features were detected. The oxide surface was exposed to metal atoms (Cu, Pd) at RT. A comparison with the DOS extracted from first-principles DFT calculations shows that the metal-induced intensity developing above the top of the O 2p valence band in the UP spectra under Cu(Pd) exposure is caused by Cu 3d (Pd 4d) emission. The emission seen in the MIES spectra is attributed to the ionization of Cu 3d and 4s states of adsorbed neutral Cu atoms in an Auger process, Auger neutralization, involving two electrons from the surface, at least one of them from the metal adsorbate. The shape of the MIES spectra suggests metallic island growth even at the lowest studied exposures, which is supported by the first-principles calculations. |
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Keywords: | Electron spectroscopy First-principles calculations MIES UPS Cu Pd MgO Thin film growth |
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