Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix |
| |
Authors: | A Chahboun S Levichev O Conde |
| |
Institution: | a Centro de Física, Universidade do Minho, 4710-057 Braga, Portugal b LPS, Physics Department, FSDM, BP 1796, FES, Morocco c Physics Department, University of Lisbon, Lisbon, Portugal |
| |
Abstract: | In this work, CdSe nanocrystals (NCs) embedded in SiO2 matrix were grown by radio frequency (RF)-sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4±1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO2 system showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs. |
| |
Keywords: | CdSe Nanocrystals Photoluminescence Temperature dependence Thermal expansion |
本文献已被 ScienceDirect 等数据库收录! |
|