Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose |
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| Authors: | A.A. Bergman Mengbing Huang |
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| Affiliation: | a The College of Staten Island and The Graduate Center of CUNY, 2800 Victory Blvd., Staten Island, NY 10314, USA
b The University at Albany, The State University of New York, 1400 Washington Avenue, Albany, NY 12222, USA |
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| Abstract: | We report on photoluminescence and Raman studies of Xe ion-implanted diamond. Several natural and high-purity artificial diamonds implanted within the wide dose range of 1010-5×1014 ion/cm2 were studied. The room temperature luminescence of the Xe center consists of two zero phonon lines, at 813 nm (strong) and 794 nm (weak). The dose dependences of photoluminescence and Raman spectra were studied. For doses less than 1013 ion/cm2, the luminescence intensity grows with the implantation dose linearly. The defect-induced photoluminescence quenching was observed for doses equal or more than 1013 ion/cm2. Possible models of the Xe center will be discussed. The nature of damages induced by ion implantation at different doses was analyzed using micro-Raman spectroscopy. |
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| Keywords: | 61.72.&minus y 61.72.Ww 78.55.&minus m 78.30.&minus j |
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