| 有机胺碱对硅粗抛光及表面微形貌的影响 |
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| 引用本文： | 王娜,刘玉岭,孙鸣,杨立兵,高净,刘利宾.有机胺碱对硅粗抛光及表面微形貌的影响[J].微纳电子技术,2011,48(11):749-752. |
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| 作者姓名： | 王娜 刘玉岭 孙鸣 杨立兵 高净 刘利宾 |
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| 作者单位： | 河北工业大学微电子研究所,天津,300130 |
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| 基金项目： | 国家中长期科技发展规划02科技重大专项(2009ZX02308) |
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| 摘 要： | 硅单晶抛光片是极大规模集成电路应用最广泛的衬底材料,抛光液为影响硅单晶片抛光最关键的因素。通过改变抛光液中有机胺碱配比来调节抛光液的pH值。实验结果表明:随着有机胺碱比例的不断增加,pH值随之上升,硅片的去除速率(material removal rate,MRR)先增大后减小。pH值在10.5左右时去除速率达到最大值(1706nm/min)。此时用Agilent 5600LS型原子力显微镜测得硅片表面的粗糙度为0.369nm。并用马尔文Zetasizer 3000HSA纳米粒度分析仪测定不同有机胺碱浓度下的抛光液中水溶胶磨粒粒径变化。通过对实验后晶片表面进行检测并结合去除速率综合考虑,抛光液pH值宜选择为10.5左右。抛光速率在pH值为10.3～10.6比较稳定。
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| 关 键 词： | 硅单晶片 有机胺碱 抛光液 抛光速率 表面粗糙度 |
Effect of Organic Amine Alkali on Silicon Stock Polishing and Surface Micro Morphology |
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| Wang Na,Liu Yuling,Sun Ming,Yang Libing,Gao Jing,Liu Libin.Effect of Organic Amine Alkali on Silicon Stock Polishing and Surface Micro Morphology[J].Micronanoelectronic Technology,2011,48(11):749-752. |
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| Authors: | Wang Na Liu Yuling Sun Ming Yang Libing Gao Jing Liu Libin |
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| Institution: | Wang Na,Liu Yuling,Sun Ming,Yang Libing,Gao Jing,Liu Libin (Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | The monocrystalline silicon polished wafers are widely used for the substrate of integrated circuits,the slurry is the most critical effect factor for CMP.The pH value of the slurry was regulated by changing the concentration of organic amine alkali.The results show that the pH value increases and the material removal rate of silicon wafer first increases and then decreases with the increase of the concentration for the organic amine alkali.The highest value of removal rate(1 706 nm/min)was reached at the p... |
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| Keywords: | silicon single chip organic amine alkali slurry polishing rate surface roughness |
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