The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced
chemical vapour deposition and the fabrication of solar cells |
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Authors: | Chen Yong-Sheng Wang Jian-Hu Lu Jing-Xiao Zheng Wen Gu Jin-Hu Yang Shi-E Gao Xiao-Yong Guo Xue-Jun Zhao Shang-Li and Gao Zhe |
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Institution: | Department of Materials Science and Engineering, Wuhan
Institute of Technology, Wuhan 430073, China; Institute of Plasma Physics, Chinese Academy of
Sciences, Hefei 230031,
China;Key Laboratory of Material Physics, Department of
Physics, Zhengzhou University,
Zhengzhou 450052, China; Key Laboratory of Material Physics, Department of
Physics, Zhengzhou University,
Zhengzhou 450052, China |
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Abstract: | This paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinityProgram supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinityProgram supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinityProgram supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with Hchemical vapour deposition,
plasma deposition, solar cells, crystallinityProgram supported by the State Key
Development Program for Basic Research of China (Grant No
2006CB202601), and Basic Research Project of Henan Province in China
(Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu
$c-Si:H) films are prepared with plasma enhanced chemical vapour
deposition from silane/hydrogen mixtures at 200\du\ with the aim to
increase the deposition rate. An increase of the deposition rate to
0.88\,nm/s is obtained by using a plasma excitation frequency of
75\,MHz. This increase is obtained by the combination of a higher
deposition pressure, an increased silane concentration, and higher
discharge powers. In addition, the transient behaviour, which can
decrease the film crystallinity, could be prevented by filling the
background gas with H$_{2}$ prior to plasma ignition, and selecting
proper discharging time after silane flow injection. Material
prepared under these conditions at a deposition rate of 0.78\,nm/s
maintains higher crystallinity and fine electronic properties. By
H-plasma treatment before i-layer deposition, single junction $\mu
$c-Si:H solar cells with 5.5{\%} efficiency are fabricated. |
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Keywords: | chemical vapour deposition plasma deposition solar cells crystallinity |
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