Junction parameters for silicon devices characterization |
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| Authors: | M de la Bardonnie N Toufik C Salam S Dib P Mialhe A Hoffmann J -P Charles |
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| Institution: | M. de la Bardonnie, N. Toufik, C. Salamé, S. Dib, P. Mialhe, A. Hoffmann,J. -P. Charles |
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| Abstract: | An innovative method for device characterization is developed to qualify microelectronic devices. The method is based on parameter extraction from the junction I–V characteristics. Their evolution during electrical aging and ionizing radiation experiments allows an evaluation of the magnitude of the degradation. Results obtained with commercial samples show a signature of both manufacturer and technological processes. This method is easy to implement in a control process for device characterization. |
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