Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates |
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Authors: | Hyun-Kyu Park Beelyong Yang Sang-Woo Kim Gil-Ho Kim Doo-Hyeb Youn Sang-Hyeob Kim Sung-Lyul Maeng |
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Institution: | aSchool of Advanced Materials and System Engineering, Kumoh National Institute of Technology, 1 Yangho-dong, Gumi, Gyeongbuk 730-701, South Korea;bSchool of Information and Communication Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, South Korea;cCambridge-ETRI Joint R&D Center, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Daejeon 305-700, South Korea |
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Abstract: | Amorphous silicon oxide (SiOx) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiOx nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiOx nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid. |
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Keywords: | Silicon oxide Nanowire CVD Silicon substrate |
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