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Kinetics of formation of sulfur dimers in pure SF6 and SF6-O2 discharges |
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| Authors: | N Sadeghi H Debontride G Turban M C Peignon |
| Institution: | (1) Laboratoire de Spectrométrie Physique, UA CNRS 08, Universite Joseph Fourier de Grenoble, B.P. 87, 38402 Saint-Martin d'Hères Cedex, France;(2) Laboratoire des Plasmas et des Couches Minces, UMR 110, IPCM-CNRS, Universite de Nantes, 2 rue de la Houssinière, 44072 Nantes Cedex 03, France |
| Abstract: | The emission band spectra of S, molecule (B3
u
–
 X3
g
–
transition) and of SO molecule (A3 X3–) were detected in SF6 and SF6-O2 rf discharges. It has been observed that the presence of a material which can be etched by SF6 products considerably enhances the density of S2 in the reactor. By means of mass spectrometry it has been shown that the m/e =83 mu signal assigned to S2F4 ions evolves exactly in the same manner as the S2 band intensity during the etching of Si or W in SF6-O2 discharge. A reaction scheme involving S2F radicals is proposed to explain these experimental results. |
| Keywords: | Sulphur hexafluoride optical emission spectroscopy mass spectroscopy SF6 discharge |
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